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AO4840 - 40V Dual N-Channel MOSFET

General Description

The AO4840 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

This dual device is suitable for use as a load switch or in PWM applications.

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AO4840 40V Dual N-Channel MOSFET General Description The AO4840 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. This dual device is suitable for use as a load switch or in PWM applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 40V 6A < 30mW < 38mW Top View SOIC-8 Bottom View Top View S2 1 8 G2 2 7 S1 3 6 G1 4 5 D2 D2 D1 D1 G1 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.