Datasheet Details
| Part number | AO6402 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 278.47 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet |
 AO6402 Datasheet
|
|
|
| Part number | AO6402 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 278.47 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet |
AO6402 Datasheet
|
|
|
|
Product Summary The AO6402 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device may be used as a load switch or in PWM applications.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS =4.5V) 30V 5A < 31mΩ < 43mΩ TSOP6 Top View Bottom View Top View D D D D G S G Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 5 4 20 1.25 0.8 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 82 110 Maximum Junction-to-Lead Steady-State RθJL 56 Max 100 130 70 D S Units V V A W °C Units °C/W °C/W °C/W Rev 8: February 2011 www.aosmd.com Page 1 of 5 AO6402 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V 30 IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.2 ID(ON) On state drain current VGS=10V, VDS=5V 25 VGS=10V, ID=5A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=4A gFS Forward Transconductance VDS=5V, ID=5A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current V 1 µA 5 ±100 nA 1.8 2.4 V A 25.5 31 mΩ 41 50 34 43 mΩ 15 S 0.76 1 V 1.5 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 255 310 pF 45 pF 35 50 pF 1.6 3.25 4.9 Ω SWITCHING PARAMET
AO6402 30V N-Channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AO6402 | N-Channel MOSFET | Kexin |
|
AO6402A | N-Channel MOSFET | Kexin |
| Part Number | Description |
|---|---|
| AO6402A | 30V N-Channel MOSFET |
| AO6402L | N-Channel MOSFET |
| AO6400 | 30V N-Channel MOSFET |
| AO6401 | 30V P-Channel MOSFET |
| AO6401A | P-Channel MOSFET |
| AO6403 | 30V P-Channel MOSFET |
| AO6404 | N-Channel MOSFET |
| AO6405 | 30V P-Channel MOSFET |
| AO6407 | P-Channel MOSFET |
| AO6408 | N-Channel MOSFET |