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AO6407 - P-Channel MOSFET

Description

The AO6407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS (V) = -20V ID = -5 A RDS(ON) < 45mΩ (VGS = -4.5V) RDS(ON) < 60mΩ (VGS = -2.5V) RDS(ON) < 85mΩ (VGS = -1.8V) TSOP6 Top View D 16 D D 25 D G 34 S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B ID IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -20 ±8 -5.5 -4.5 -30 2 1.44 -55 to 15.

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Full PDF Text Transcription

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January 2003 AO6407 P-Channel Enhancement Mode Field Effect Transistor General Description The AO6407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = -20V ID = -5 A RDS(ON) < 45mΩ (VGS = -4.5V) RDS(ON) < 60mΩ (VGS = -2.5V) RDS(ON) < 85mΩ (VGS = -1.8V) TSOP6 Top View D 16 D D 25 D G 34 S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B ID IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -20 ±8 -5.5 -4.
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