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AO6408 - N-Channel MOSFET

Datasheet Summary

Description

The AO6408 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It offers operation over a wide gate drive range from 1.8V to 12V.

It is ESD protected.

Features

  • VDS (V) = 20V (VGS = 10V) ID = 8.8A RDS(ON) < 18m Ω (VGS = 10V) RDS(ON) < 20m Ω (VGS = 4.5V) RDS(ON) < 25m Ω (VGS = 2.5V) RDS(ON) < 32m Ω (VGS = 1.8V) ESD Rating: 2000V HBM TSOP-6 Top View www. DataSheet4U. com D D D G 1 6 2 5 3 4 D D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Maximum 20 ±12 8.8 7 40 2 1.28 -55 to 150 Units V V A VGS TA=25°C.

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Datasheet preview – AO6408

Datasheet Details

Part number AO6408
Manufacturer Alpha & Omega Semiconductors
File Size 168.07 KB
Description N-Channel MOSFET
Datasheet download datasheet AO6408 Datasheet
Additional preview pages of the AO6408 datasheet.

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Full PDF Text Transcription

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AO6408 N-Channel Enhancement Mode Field Effect Transistor General Description The AO6408 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It offers operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is suitable for use as a load switch. Standard product AO6408 is Pbfree (meets ROHS & Sony 259 specifications). AO6408L is a Green Product ordering option. AO6408 and AO6408L are electrically identical. Features VDS (V) = 20V (VGS = 10V) ID = 8.8A RDS(ON) < 18m Ω (VGS = 10V) RDS(ON) < 20m Ω (VGS = 4.5V) RDS(ON) < 25m Ω (VGS = 2.5V) RDS(ON) < 32m Ω (VGS = 1.8V) ESD Rating: 2000V HBM TSOP-6 Top View www.DataSheet4U.
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