Datasheet Details
| Part number | AO6415 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 310.93 KB |
| Description | 20V P-Channel MOSFET |
| Download | AO6415 Download (PDF) |
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| Part number | AO6415 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 310.93 KB |
| Description | 20V P-Channel MOSFET |
| Download | AO6415 Download (PDF) |
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|
|
Product Summary The AO6415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
This device is suitable for use as a load switch or in PWM applications.
VDS ID (at VGS=-10V) RDS(ON) (at VGS= -10V) RDS(ON) (at VGS= -4.5V) RDS(ON) (at VGS= -2.5V) Typical ESD protection -20V -3.3A < 82mΩ < 100mΩ < 140mΩ HBM Class 2 TSOP6 Top View Bottom View Top View D1 D2 G3 6D 5D 4S G Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C ID IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -20 ±12 -3.3 -2.7 -17 1.25 0.8 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 82 111 56 Max 100 140 70 D S Units V V A W °C Units °C/W °C/W °C/W Rev 2: Jul 2011 www.aosmd.com Page 1 of 5 AO6415 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=-250µA, VGS=0V VDS=-20V, VGS=0V IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current VDS=0V, VGS= ±12V VDS=VGS, ID=-250µΑ VGS=-4.5V, VDS=-5V VGS=-10V, ID=-3.3A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, ID=-2A VGS=-2.5V, ID=-1A Forward Transconductance VDS=-5V, ID=-3.3A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current TJ=55°C TJ=125°C -20 -0.5 -17 -0.85 68 95 80 107 8.6 -0.76 -1 -5 ±10 -1.2 82 115 100 140 -1 -1.5 V µA µA V A mΩ mΩ mΩ S V A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Tran
AO6415 20V P-Channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AO6415 | P-Channel MOSFET | Kexin |
| Part Number | Description |
|---|---|
| AO6414 | N-Channel MOSFET |
| AO6419 | P-Channel MOSFET |
| AO6400 | 30V N-Channel MOSFET |
| AO6401 | 30V P-Channel MOSFET |
| AO6401A | P-Channel MOSFET |
| AO6402 | 30V N-Channel MOSFET |
| AO6402A | 30V N-Channel MOSFET |
| AO6402L | N-Channel MOSFET |
| AO6403 | 30V P-Channel MOSFET |
| AO6404 | N-Channel MOSFET |