Description
The AO6601 uses advanced trench technology to www.DataSheet4U.com provide excellent RDS(ON) and low gate charge.
Features
- n-channel p-channel -30V VDS (V) = 30V ID = 3.4A (VGS = 10V) -2.3A (VGS = -10V) RDS(ON) < 60m Ω (VGS = 10V) < 135m Ω (VGS = -10V) < 75m Ω (VGS = 4.5V) < 185m Ω (VGS = -4.5V) < 115m Ω(VGS = 2.5V) < 265m Ω (VGS = -2.5V)
D1 TSOP6 Top View G1 S2 G2 1 6 2 5 3 4 D1 S1 D2 G1 S1 G2
D2
S2
n-channel
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Diss.
AO6601_AlphaOmegaSemiconductors.pdf
