Description
The AO6605 uses advanced trench technology to www.DataSheet4U.com provide excellent RDS(ON) and low gate charge.
Features
- n-channel p-channel -20V VDS (V) = 20V ID = 1.9A (VGS = 4.5V) -2.5A RDS(ON) < 200m Ω < 97mΩ (VGS = 4.5V) < 270m Ω < 130mΩ (VGS = 2.5V) < 400m Ω < 190mΩ (VGS = 1.8V)
D1 TSOP6 Top View G1 S2 G2 1 6 2 5 3 4 D1 S1 D2 G1 S1 G2
D2
S2
n-channel
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 20 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation
B
Max p-channel -20 ±8 -2.5 -2.0 -15 1.15 0.
AO6605_AlphaOmegaSemiconductors.pdf
