Datasheet4U Logo Datasheet4U.com

AONY36354 - Dual Asymmetric N-Channel MOSFET

General Description

Trench Power MOSFET technology Low RDS(ON) Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Q1 30V 49A

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AON6200L 30V N-Channel MOSFET Freescale
AON6405 P-Channel MOSFET VBsemi
AON6512 N-Channel MOSFET Kexin
AON6516 N-Channel MOSFET Kexin
AON6910A Dual N-Channel MOSFET VBsemi

Other Datasheets by Alpha & Omega Semiconductors

Part Number Description
AONY36352 30V Dual Asymmetric N-Channel MOSFET
AONY36356 30V Dual Asymmetric N-Channel MOSFET
AONY36304 30V Dual Asymmetric N-Channel MOSFET
AONY36306 30V Dual Asymmetric N-Channel MOSFET
AON1605 20V P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AONY36354 30V Dual Asymmetric N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Q1 30V 49A <5.3mΩ <9.1mΩ Q2 30V 85A <2.6mΩ <3.