AOU405 Datasheet P-Channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: www.DataSheet4U.com AOU405 P-Channel Enhancement Mode Field Effect.

Datasheet Details

The AOU405 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance.

With the excellent thermal resistance of the TO-251 package, this device is well suited for high current load applications.

Standard Product AOU405 is Pb-free (meets ROHS & Sony 259 specifications).

VDS (V) = -30V ID = -18A (VGS = -10V) RDS(ON) < 34mΩ (VGS = -10V) RDS(ON) < 60mΩ (VGS = -4.5V) Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A.