AOU405 Datasheet P-Channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Datasheet Details

The AOU405 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance.

With the excellent thermal resistance of the TO-251 package, this device is well suited for high current load applications.

Standard Product AOU405 is Pb-free (meets ROHS & Sony 259 specifications).

www.DataSheet4U.com AOU405 P-Channel Enhancement Mode Field Effect.

VDS (V) = -30V ID = -18A (VGS = -10V) RDS(ON) < 34mΩ (VGS = -10V) RDS(ON) < 60mΩ (VGS = -4.5V) Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A.