AOU436 Datasheet N-Channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Datasheet Details

The AOU436 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Standard Product AOU436 is Pb-free (meets ROHS & Sony 259 specifications).

www.DataSheet4U.com AOU436 N-Channel Enhancement Mode Field Effect.

VDS (V) = 30V ID = 57A (VGS = 10V) RDS(ON) < 8.5mΩ (VGS = 10V) RDS(ON) < 14mΩ (VGS = 4.5V) TO-251 D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B, Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH C Power Dissipation B TC=25°C TC=100°C TC=25°C TC=100°C B Maximum 30 ±20 57 40 100 30 143 50 25 -55 to 175 Units V V A A m.