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BLA6H0912-500 - LDMOS avionics radar power transistor

Datasheet Summary

Description

500 W LDMOS power transistor intended for avionics transmitter applications in the 960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN.

Table 1.

Test information Typical RF performance at Tcase = 25 C; tp = 128 s;  = 10 %; IDq = 100 mA; in a class-AB production test circuit.

Features

  • Typical pulsed RF performance at a frequency of 960 MHz to 1215 MHz, a supply voltage of 50 V, an IDq of 100 mA, a tp of 128 s with  of 10 %:.
  • Output power = 450 W.
  • Power gain = 17 dB.
  • Efficiency = 50 %.
  • Easy power control.
  • Integrated ESD pro.

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Datasheet Details

Part number BLA6H0912-500
Manufacturer Ampleon
File Size 332.73 KB
Description LDMOS avionics radar power transistor
Datasheet download datasheet BLA6H0912-500 Datasheet
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BLA6H0912-500 LDMOS avionics radar power transistor Rev. 05 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for avionics transmitter applications in the 960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN. Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 128 s;  = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation f (MHz) VDS PL Gp D tr tf (V) (W) (dB) (%) (ns) (ns) pulsed RF 960 to 1200 50 450 17 50 20 6 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.
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