BLF6G20-180RN Datasheet Power LDMOS transistor

Manufacturer: Ampleon

Datasheet Details

180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit.

BLF6G20-180RN; BLF6G20LS-180RN Power LDMOS transistor Rev.

2 — 1 September 2015 Product data sheet 1.

Product profile 1.

Typical 2-carrier WCDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 30 V and an IDq of 1400 mA:.
Average output power = 40 W.
Power gain = 17.2 dB.
Efficiency = 27 %.
IMD3 = 41 dBc.
ACPR = 38 dBc.
Easy power control.
Integrated ESD protection.
Enhanced ruggedness.
High efficiency.
Excellent thermal stability.
Designed for broadband operation (1800 MHz to 2000 MHz).
Internally matched for ease of use.

Part Number	Description	Manufacturer
BLF6G20-180RN	Power LDMOS Transistor	NXP
BLF6G20-180P	UHF power LDMOS transistor	NXP
BLF6G20-180PN	Power LDMOS transistor	NXP Semiconductors