BLF6G20-180RN
description
180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier WCDMA
[1] f (MHz) 1930 to 1990
VDS (V) 30
PL(AV) (W) 40
Gp (d B) 17.2
ηD (%) 27
IMD3 (d Bc)
- 38[1]
ACPR (d Bc)
- 41[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 d B at 0.01 % probability on CCDF per carrier; carrier spacing 10 MHz.
CAUTION This device is sensitive to Electro Static Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
I Typical 2-carrier WCDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 30 V and an IDq of 1400 m A: N Average output power = 40 W N Power gain = 17.2 d B N Efficiency = 27 % N IMD3 =
- 41 d Bc N ACPR =
- 38 d Bc I Easy power control I Integrated ESD protection I Enhanced ruggedness I High efficiency I Excellent thermal stability I Designed...
