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BLF6G20-180RN Datasheet - NXP

Power LDMOS Transistor

BLF6G20-180RN Features

* I Typical 2-carrier WCDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 30 V and an IDq of 1400 mA: N Average output power = 40 W N Power gain = 17.2 dB N Efficiency = 27 % N IMD3 =

* 41 dBc N ACPR =

* 38 dBc I Easy power control I Integrated ESD protection I

BLF6G20-180RN General Description

180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier WCDMA [1] f (MHz) 1930 to 1990 VDS (V) 30 PL(AV) (W) 40 Gp .

BLF6G20-180RN Datasheet (141.98 KB)

Preview of BLF6G20-180RN PDF

Datasheet Details

Part number:

BLF6G20-180RN

Manufacturer:

NXP ↗

File Size:

141.98 KB

Description:

Power ldmos transistor.
www.DataSheet4U.com BLF6G20-180RN; BLF6G20LS-180RN Power LDMOS transistor Rev. 01 17 November 2008 Product data sheet 1. Product profile 1..

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TAGS

BLF6G20-180RN Power LDMOS Transistor NXP

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