BLF6G20-180RN Datasheet Power Ldmos Transistor

Manufacturer: NXP Semiconductors

Overview: www.DataSheet4U.com BLF6G20-180RN; BLF6G20LS-180RN Power LDMOS transistor Rev. 01 — 17 November 2008 Product data sheet 1. Product proﬁle 1.

Datasheet Details

Part number	BLF6G20-180RN
Manufacturer	NXP Semiconductors
File Size	141.98 KB
Description	Power LDMOS Transistor
Datasheet	BLF6G20-180RN_PhilipsSemiconductors.pdf

General Description

180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.

Key Features

I Typical 2-carrier WCDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 30 V and an IDq of 1400 mA: N Average output power = 40 W N Power gain = 17.2 dB N Efﬁciency = 27 % N IMD3 =.
41 dBc N ACPR =.
38 dBc I Easy power control I Integrated ESD protection I Enhanced ruggedness I High efﬁciency I Excellent thermal stability I Designed for broadband operation (1800 MHz to 2000 MHz) I Internally matched for ease of use www. DataSheet4U. com NXP Semiconducto.

BLF6G20-180RN Distributor

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