BLF6G20-180RN - Power LDMOS Transistor

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NXP

BLF6G20-180RN Power LDMOS Transistor by NXP - Datasheet Preview — Datasheet preview – BLF6G20-180RN

Datasheet Details

Part number	BLF6G20-180RN
Manufacturer	NXP
File Size	141.98 KB
Description	Power LDMOS Transistor
Datasheet	BLF6G20-180RN Datasheet
Additional preview pages of the BLF6G20-180RN datasheet.

Product details

Description

180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. 38[1] ACPR (dBc) 41[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier spacing 10 MHz.CAU

Features

I Typical 2-carrier WCDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 30 V and an IDq of 1400 mA: N Average output power = 40 W N Power gain = 17.2 dB N Efﬁciency = 27 % N IMD3 =.
41 dBc N ACPR =.
38 dBc I Easy power control I Integrated ESD protection I Enhanced ruggedness I High efﬁciency I Excellent thermal stability I Designed for broadband operation (1800 MHz to 2000 MHz) I Internally matched for ease of use www. DataSheet4U. com NXP Semiconducto.

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Published: Jul 29, 2009 |