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BLF6G21-10G - Power LDMOS transistor

Description

Table 1.

IDq = 100 mA; Tcase = 25 C in a common source class-AB production test circuit.

Features

  • Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 100 mA:.
  • Average output power = 0.7 W.
  • Gain = 18.5 dB.
  • E.

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Datasheet Details

Part number BLF6G21-10G
Manufacturer Ampleon
File Size 338.01 KB
Description Power LDMOS transistor
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BLF6G21-10G Power LDMOS transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 1. Typical performance IDq = 100 mA; Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D (MHz) (V) (W) (dB) (%) 2-carrier W-CDMA 2110 to 2170 28 0.7 18.5 15 1-carrier W-CDMA 2110 to 2170 28 2 19.3 31 ACPR (dBc) 50[1] 39[1] [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.
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