logo

BLM2006NE Datasheet, BELLING

BLM2006NE mosfet equivalent, n-channel enhancement mode power mosfet.

BLM2006NE Avg. rating / M : 1.0 rating-14

datasheet Download

BLM2006NE Datasheet

Features and benefits


* VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.5V ESD Rating: 2000V HBM
* High Power and current handing capability
* Lead free product i.

Application

.It is ESD protested. General Features
* VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.5V ESD Ra.

Description

The BLM2006NE uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Feature.

Image gallery

BLM2006NE Page 1 BLM2006NE Page 2 BLM2006NE Page 3

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts