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BLM2006NE - N-Channel Enhancement Mode Power MOSFET

Description

The BLM2006NE uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications .It is ESD protested.

Features

  • VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.5V ESD Rating: 2000V HBM.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Datasheet Details

Part number BLM2006NE
Manufacturer BELLING
File Size 285.55 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet BLM2006NE Datasheet

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Full PDF Text Transcription

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N-Channel Enhancement Mode Power MOSFET Pb Free Product BLM2006NE Description The BLM2006NE uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ● VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.
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