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BLM2010E - N-Channel Enhancement Mode Power MOSFET

Description

The BLM2010E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications .It is ESD protested.

Features

  • VDS = 20V,ID =7A Typ. RDS(ON)= 16mΩ @ VGS=4.5V Typ. RDS(ON)= 20mΩ @ VGS=2.5V ESD Rating: 2000V HBM.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package Schematic diagram Marking and pin Assignment.

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Datasheet Details

Part number BLM2010E
Manufacturer BELLING
File Size 301.62 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet BLM2010E Datasheet

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Full PDF Text Transcription

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ROHS Product BLM2010E N-Channel Enhancement Mode Power MOSFET Description The BLM2010E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ● VDS = 20V,ID =7A Typ.RDS(ON)= 16mΩ @ VGS=4.5V Typ.RDS(ON)= 20mΩ @ VGS=2.
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