BLM2010E mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS = 20V,ID =7A Typ.RDS(ON)= 16mΩ @ VGS=4.5V Typ.RDS(ON)= 20mΩ @ VGS=2.5V ESD Rating: 2000V HBM
* High Power and current handing capability
* Lead free pro.
.It is ESD protested.
General Features
* VDS = 20V,ID =7A Typ.RDS(ON)= 16mΩ @ VGS=4.5V Typ.RDS(ON)= 20mΩ @ VGS=2.5V.
The BLM2010E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested.
General Feature.
Image gallery