Datasheet4U Logo Datasheet4U.com

BLM2010E Datasheet - BELLING

N-Channel Enhancement Mode Power MOSFET

BLM2010E Features

* VDS = 20V,ID =7A Typ.RDS(ON)= 16mΩ @ VGS=4.5V Typ.RDS(ON)= 20mΩ @ VGS=2.5V ESD Rating: 2000V HBM

* High Power and current handing capability

* Lead free product is acquired

* Surface Mount Package Schematic diagram Marking and pin Assignment Application

* PWM application

BLM2010E Datasheet (301.62 KB)

Preview of BLM2010E PDF

Datasheet Details

Part number:

BLM2010E

Manufacturer:

BELLING

File Size:

301.62 KB

Description:

N-channel enhancement mode power mosfet.

📁 Related Datasheet

BLM2004NE N-Channel Enhancement Mode Power MOSFET (BELLING)

BLM2006NE N-Channel Enhancement Mode Power MOSFET (BELLING)

BLM2008E N-Channel Enhancement Mode Power MOSFET (BELLING)

BLM211 Bluetooth Module (Buddies-tech)

BLM21AG102SN1B EMI Suppression Filters (Murata)

BLM21AG102SN1D EMI Suppression Filters (Murata)

BLM21AG102SN1J EMI Suppression Filters (Murata)

BLM21AG121SN1 On-Board Type (DC) EMI Suppression Filters (Murata)

BLM21AG121SN1B EMI Suppression Filter (Murata)

BLM21AG121SN1D EMI Suppression Filter (Murata)

TAGS

BLM2010E N-Channel Enhancement Mode Power MOSFET BELLING

Image Gallery

BLM2010E Datasheet Preview Page 2 BLM2010E Datasheet Preview Page 3

BLM2010E Distributor