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BLM2312 - N-Channel Enhancement Mode Power MOSFET

Description

The BLM2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a battery protection or in other switching application.

Features

  • VDS = 20V,ID = 4.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package D G S Schematic diagram Marking and pin assignment.

📥 Download Datasheet

Datasheet Details

Part number BLM2312
Manufacturer BELLING
File Size 409.90 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet BLM2312 Datasheet

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Full PDF Text Transcription

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Pb Free Product BLM2312 N-Channel Enhancement Mode Power MOSFET Description The BLM2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. General Features ● VDS = 20V,ID = 4.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.
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