NE3510M04 Datasheet - CEL

HETERO JUNCTION FIELD EFFECT TRANSISTOR

NE3510M04 Features

* Low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 16 dB TYP. @ f = 4 GHz, VDS = 2 V, ID = 15 mA NF = 0.35 dB TYP., Ga = 19 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA (Reference only)

* Flat-lead 4-pin thin-type super minimold (M04) package APPLICATIONS

* Sa

NE3510M04 General Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full.

NE3510M04 Datasheet (204.40 KB)

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NE3510M04

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CEL

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204.40 KB

Description:

Hetero junction field effect transistor.

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NE3510M04 HETERO JUNCTION FIELD EFFECT TRANSISTOR CEL

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NE3510M04 Features

NE3510M04 General Description

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