MXN3060 Datasheet, MOSFET, ChipSourceTek

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MXN3060 Features and benefits

VDS = 30V,ID = 80 A RDS(ON) (Typ.)5.0mΩ @ VGS=10V RDS(ON) (Typ.)6mΩ @ VGS=-4.5V k Low density cell desig e Fully characterized avalanche voltage T and current Good stab.

MXN3060 Application

MXN3060 General Features VDS = 30V,ID = 80 A RDS(ON) (Typ.)5.0mΩ @ VGS=10V RDS(ON) (Typ.)6mΩ @ VGS=-4.5V k Low densi.

MXN3060 Description

The MXN3060 uses advanced trench technology and design to provide excellent RDS(ON), With low gate charge. It can be used in awide variety Of applications. MXN3060 General Features VDS = 30V,ID = 80 A RDS(ON) (Typ.)5.0mΩ @ VGS=10V RDS(ON) (Typ.)6m.

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