MXN3050G Datasheet, MOSFET, ChipSourceTek

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MXN3050G Features and benefits

VDS = 30V,ID = 50 A RDS(ON) < 9mΩ @ VGS=10V RDS(ON) < 13mΩ @ VGS=-4.5V k Low density cell desig e Fully characterized avalanche voltage T and current Good stability and.

MXN3050G Application

MXN3050G General Features VDS = 30V,ID = 50 A RDS(ON) < 9mΩ @ VGS=10V RDS(ON) < 13mΩ @ VGS=-4.5V k Low density cell .

MXN3050G Description

The MXN3050G uses advanced trench technology and design to provide excellent RDS(ON), With low gate charge. It can be used in awide variety Of applications. MXN3050G General Features VDS = 30V,ID = 50 A RDS(ON) < 9mΩ @ VGS=10V RDS(ON) < 13mΩ @ VGS.

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