MXN3345
MXN3345 is P-Channel Enhancement Mode Power MOSFET manufactured by ChipSourceTek.
Description
The MXN3345 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.This device is suitable for use as a load switch or in PWM and a wide varieer applications.
Schematic diagram
General Features
- VDS =-30V,ID =-30A
- RDS(ON) (Typ.)= 12 m Ω @ VGS=-10V
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- RDS(ON) (Typ.)= 22m Ω @ VGS=-4.5V k High Power and current handing capability 科 e Lead free product is acquired
Surface mount package
源特 rce T Application
PWM applications u Load switch
Power management
3345 Marking and pin Assignment
矽 So PDFN3.3x3.3-8L ip Absolute Maximum Ratings (TA=25℃ unless otherwise noted)
Ch Drain-Source Voltage
Parameter
Symbol VDS
Limit
Unit
-30
Gate-Source Voltage
±20
Drain Current-Continuous, TC =25℃
Drain Current-Pulsed (Note 1)
-30
-80
Drain Current-Continuous, TA =25℃
IDSM
-11
Maximum Power Dissipation, TA...