PE8816 - N-Channel Enhancement Mode Power MOSFET

ChipSourceTek

General Description

The PE8816 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Key Features

VDS = 18V, ID = 9A RDS(ON) < 10mΩ @ VGS=4.5V RDS(ON) < 11mΩ @ VGS=3.8V RDS(ON) < 13mΩ @ VGS=2.5V Schematic diagram.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package.

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PE8816 n-channel enhancement mode power mosfet by ChipSourceTek - Datasheet Preview

Datasheet Details

Part number	PE8816
Manufacturer	ChipSourceTek
File Size	1.01 MB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PE8816 Datasheet

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PE8816 N-Channel Enhancement Mode Power MOSFET Description The PE8816 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 18V, ID = 9A RDS(ON) < 10mΩ @ VGS=4.5V RDS(ON) < 11mΩ @ VGS=3.8V RDS(ON) < 13mΩ @ VGS=2.