PE8816 - N-Channel Enhancement Mode Power MOSFET

ChipSourceTek

Datasheet Details

The PE8816 uses advanced trench technology to provide excellent RDS(ON) and low gate charge..

VDS = 18V, ID = 9A RDS(ON) < 10mΩ @ VGS=4.5V RDS(ON) < 11mΩ @ VGS=3.8V RDS(ON) < 13mΩ @ VGS=2.5V Schematic diagram.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package Application.
Battery Protection k.
Load switch.
Power management Marking and pin assignment ourceTe Absolute Maximum Ratings (TA=25℃ unless otherwise noted) Parameter S Drain-Source Voltage ip Gate-Source Voltage Drain Current-Continuous h Pulse.

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