PE8810C
PE8810C is N-Channel Enhancement Mode Power MOSFET manufactured by ChipSourceTek.
- Part of the PE8810C-ChipSourceTek comparator family.
- Part of the PE8810C-ChipSourceTek comparator family.
Description
The PE8810C uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
General Features
- VDS = 18V, ID = 8.5 A RDS(ON) < 13.5mΩ @ VGS=4.5V
Schematic diagram
RDS(ON) < 15mΩ @ VGS=3.8V
RDS(ON) < 16.5mΩ @ VGS=3.1V
RDS(ON) < 18mΩ @ VGS=2.5V
ESD Rating: 4000V HBM
- High Power and current handing capability
- Lead free product is acquired
技
- Surface Mount Package k Application 科 e
- PWM applications
- Load switch
Marking and pin assignment
源特 rce T TSSOP-8
矽 ou Absolute Maximum Ratings (TA=25℃ unless otherwise noted)
S Drain-Source Voltage
Parameter ip Gate-Source Voltage
Drain Current-Continuous h Pulsed Drain Current (Note 1)
C Maximum Power Dissipation
Symbol
VDS VGS ID IDM PD
Rating
18 ±12 8.5 32 1.5
Unit
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 150
℃
Thermal Characteristic
Thermal Resistance, Junction-to-Ambient (Note 2)
RθJA
℃/W
TEL: +86-0755-27595155 27595165
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