• Part: PE8810C
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: ChipSourceTek
  • Size: 777.92 KB
Download PE8810C Datasheet PDF
ChipSourceTek
PE8810C
PE8810C is N-Channel Enhancement Mode Power MOSFET manufactured by ChipSourceTek.
- Part of the PE8810C-ChipSourceTek comparator family.
Description The PE8810C uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected. General Features - VDS = 18V, ID = 8.5 A RDS(ON) < 13.5mΩ @ VGS=4.5V Schematic diagram RDS(ON) < 15mΩ @ VGS=3.8V RDS(ON) < 16.5mΩ @ VGS=3.1V RDS(ON) < 18mΩ @ VGS=2.5V ESD Rating: 4000V HBM - High Power and current handing capability - Lead free product is acquired 技 - Surface Mount Package k Application 科 e - PWM applications - Load switch Marking and pin assignment 源特 rce T TSSOP-8 矽 ou Absolute Maximum Ratings (TA=25℃ unless otherwise noted) S Drain-Source Voltage Parameter ip Gate-Source Voltage Drain Current-Continuous h Pulsed Drain Current (Note 1) C Maximum Power Dissipation Symbol VDS VGS ID IDM PD Rating 18 ±12 8.5 32 1.5 Unit Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Thermal Characteristic Thermal Resistance, Junction-to-Ambient (Note 2) RθJA ℃/W TEL: +86-0755-27595155 27595165 Page...