• Part: PE8806B
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: ChipSourceTek
  • Size: 760.22 KB
Download PE8806B Datasheet PDF
ChipSourceTek
PE8806B
PE8806B is N-Channel Enhancement Mode Power MOSFET manufactured by ChipSourceTek.
- Part of the PE8806B-ChipSourceTek comparator family.
Description The PE8806B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features - VDS = 18V, ID = 6A RDS(ON) < 15mΩ @ VGS=4.5V RDS(ON) < 17mΩ @ VGS=3.8V RDS(ON) < 22mΩ @ VGS=2.5V Schematic diagram - High Power and current handing capability - Lead free product is acquired - Surface Mount Package 技 Application - Battery Protection k - Load switch 科 - Power management Marking and pin assignment 源特 rce Te SOT-23-6L 矽 ou Absolute Maximum Ratings (TA=25℃ unless otherwise noted) S Parameter Drain-Source Voltage ip Gate-Source Voltage Drain Current-Continuous h Pulsed Drain Current (Note 1) C Maximum Power Dissipation Symbol VDS VGS ID IDM PD Rating 18 ±12 6 24 1.5 Unit V V A A W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Thermal Characteristic Thermal Resistance, Junction-to-Ambient (Note 2) RθJA ℃/W TEL: +86-0755-27595155 27595165 Page 1 FAX: +86-0755-27594792 WEB:Http://.Chip Source Tek. E-mail: Tony.Wang@Chip Source Tek. In Fo@Chip Source...