PE8806B
PE8806B is N-Channel Enhancement Mode Power MOSFET manufactured by ChipSourceTek.
- Part of the PE8806B-ChipSourceTek comparator family.
- Part of the PE8806B-ChipSourceTek comparator family.
Description
The PE8806B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
General Features
- VDS = 18V, ID = 6A
RDS(ON) < 15mΩ @ VGS=4.5V RDS(ON) < 17mΩ @ VGS=3.8V RDS(ON) < 22mΩ @ VGS=2.5V
Schematic diagram
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
技 Application
- Battery Protection k
- Load switch 科
- Power management
Marking and pin assignment
源特 rce Te SOT-23-6L
矽 ou Absolute Maximum Ratings (TA=25℃ unless otherwise noted)
S Parameter
Drain-Source Voltage ip Gate-Source Voltage
Drain Current-Continuous h Pulsed Drain Current (Note 1) C Maximum Power Dissipation
Symbol
VDS VGS ID IDM PD
Rating
18 ±12
6 24 1.5
Unit
V V A A W
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 150
℃
Thermal Characteristic
Thermal Resistance, Junction-to-Ambient (Note 2)
RθJA
℃/W
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