PE8810 Datasheet, Mosfet, semi one

✔ PE8810 Features

VDS = 20V,ID =9A RDS(ON) < 20mΩ @ VGS=2.5V RDS(ON) < 15mΩ @ VGS=4.5V ESD Rating: 2000V HBM
High Power and current handing capability
Lead free product is acquired

✔ PE8810 Application

It is ESD protested. General Features
VDS = 20V,ID =9A RDS(ON) < 20mΩ @ VGS=2.5V RDS(ON) < 15mΩ @ VGS=4.5

PDF File Details

Part number:

PE8810

Manufacturer:

semi one

File Size:

967.98kb

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The PE8810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2

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PE8810 N-Channel Enhancement Mode Power MOSFET semi one