PE8810 - N-Channel Enhancement Mode Power MOSFET

semi one

Datasheet Details

Part number	PE8810
Manufacturer	semi one
File Size	967.98 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PE8810-semione.pdf

The PE8810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

VDS = 20V,ID =9A RDS(ON) < 20mΩ @ VGS=2.5V RDS(ON) < 15mΩ @ VGS=4.5V ESD Rating: 2000V HBM.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package Schematic diagram Marking and pin Assignment.

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Published: Dec 3, 2018 |