PE8810 N-Channel Enhancement Mode Power MOSFET

semi one

Description

PE8810 N-Channel Enhancement Mode Power MOSFET .
The PE8810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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Datasheet Specifications

Part number: PE8810
Manufacturer: semi one
File Size: 967.98 KB
Datasheet: PE8810-semione.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 20V,ID =9A RDS(ON) < 20mΩ @ VGS=2.5V RDS(ON) < 15mΩ @ VGS=4.5V ESD Rating: 2000V HBM
* High Power and current handing capability
* Lead free product is acquired

PE8810 Distributors

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PE8810 N-Channel Enhancement Mode Power MOSFET semi one

semi one PE8810-like datasheet