PE8810C - N-Channel Enhancement Mode Power MOSFET
PE8810C Features
* VDS = 18V, ID = 8.5 A RDS(ON) < 13.5mΩ @ VGS=4.5V Schematic diagram RDS(ON) < 15mΩ @ VGS=3.8V RDS(ON) < 16.5mΩ @ VGS=3.1V RDS(ON) < 18mΩ @ VGS=2.5V ESD Rating: 4000V HBM
* High Power and current handing capability
* Lead free product is acquired
* Surface Mount Package k Appl