PE8816 - N-Channel Enhancement Mode Power MOSFET

ChipSourceTek

Datasheet Details

Part number	PE8816
Manufacturer	ChipSourceTek
File Size	1.01 MB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PE8816-ChipSourceTek.pdf

The PE8816 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

VDS = 18V, ID = 9A RDS(ON) < 10mΩ @ VGS=4.5V RDS(ON) < 11mΩ @ VGS=3.8V RDS(ON) < 13mΩ @ VGS=2.5V Schematic diagram.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package.

📁 PE8816 Similar Datasheet

PE8810 - N-Channel Enhancement Mode Power MOSFET (semi one)
PE8813 - N-Channel Enhancement Mode Power MOSFET (semi one)
PE8804 - N-Channel Enhancement Mode Power MOSFET (semi one)
PE8806 - N-Channel Enhancement Mode Power MOSFET (semi one)
PE8050 - NPN-PNP General Purpose Complementary Amplifiers & Output Drivers (Fairchild Semiconductor)
PE80H11 - N-Channel Enhancement Mode Power MOSFET (semi one)
PE80H13 - N-Channel Enhancement Mode Power MOSFET (semi one)
PE80Q04N - SBD MODULE (Nihon Inter Electronics)

Other Datasheets by ChipSourceTek

Published: Mar 3, 2025 |