PE8813 Datasheet, Mosfet, semi one

✔ PE8813 Features

VDS = 20V,ID =10A RDS(ON) =9 mΩ@ VGS=4.5V RDS(ON) =11mΩ@ VGS=4.5V ESD Rating: 2000V HBM
High power and current handing capability
Lead free product is acquired
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✔ PE8813 Application

It is ESD protested. General Features
VDS = 20V,ID =10A RDS(ON) =9 mΩ@ VGS=4.5V RDS(ON) =11mΩ@ VGS=4.5V E

PDF File Details

Part number:

PE8813

Manufacturer:

semi one

File Size:

733.54 KB

Download:

📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The PE8813 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2

📥 Download PDF (733.54 KB)

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PE8813 N-Channel Enhancement Mode Power MOSFET semi one