PE8813 N-Channel Enhancement Mode Power MOSFET

Description

PE8813 N-Channel Enhancement Mode Power MOSFET .
The PE8813 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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PE8813 Datasheet Preview — Preview of PE8813 PDF

Datasheet Specifications

Part number: PE8813
Manufacturer: semi one
File Size: 733.54 KB
Datasheet: PE8813-semione.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 20V,ID =10A RDS(ON) =9 mΩ@ VGS=4.5V RDS(ON) =11mΩ@ VGS=4.5V ESD Rating: 2000V HBM
* High power and current handing capability
* Lead free product is acquired

PE8813 Distributors

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PE8813 N-Channel Enhancement Mode Power MOSFET semi one

semi one PE8813-like datasheet