PE8810B Datasheet, Mosfet, ChipSourceTek

✔ PE8810B Features

VDS = 18V, ID = 7A RDS(ON) < 18mΩ @ VGS=4.5V Schematic diagram RDS(ON) < 19mΩ @ VGS=3.8V RDS(ON) < 22mΩ @ VGS=3.1V RDS(ON) < 25mΩ @ VGS=2.5V ESD Rating: 4000V HBM

✔ PE8810B Application

It is ESD protected. PE8810B General Features
VDS = 18V, ID = 7A RDS(ON) < 18mΩ @ VGS=4.5V Schematic d

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Part number:

PE8810B

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ChipSourceTek

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765.23 KB

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The PE8810B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of app

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PE8810B N-Channel Enhancement Mode Power MOSFET ChipSourceTek