PE8806B - N-Channel Enhancement Mode Power MOSFET
PE8806B Features
* VDS = 18V, ID = 6A RDS(ON) < 15mΩ @ VGS=4.5V RDS(ON) < 17mΩ @ VGS=3.8V RDS(ON) < 22mΩ @ VGS=2.5V Schematic diagram
* High Power and current handing capability
* Lead free product is acquired
* Surface Mount Package Application
* Battery Protection k
* Load switch