PE8806 N-Channel Enhancement Mode Power MOSFET

Description

N-Channel Enhancement Mode Power MOSFET .
The PE8806 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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Datasheet Specifications

Part number: PE8806
Manufacturer: semi one
File Size: 883.47 KB
Datasheet: PE8806-semione.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS =16V,I D =7A RDS(ON) < 15mΩ @ VGS=4.5V RDS(ON) < 17 mΩ @ VGS=3.8V RDS(ON) < 21mΩ @ VGS=2.5V
* High Power and current handing capability
* Lead free product is acquired

PE8806 Distributors

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PE8806 N-Channel Enhancement Mode Power MOSFET semi one

semi one PE8806-like datasheet