PE8806 Datasheet, Mosfet, semi one

✔ PE8806 Features

VDS =16V,I D =7A RDS(ON) < 15mΩ @ VGS=4.5V RDS(ON) < 17 mΩ @ VGS=3.8V RDS(ON) < 21mΩ @ VGS=2.5V
High Power and current handing capability
Lead free product is acqui

✔ PE8806 Application

General Features
VDS =16V,I D =7A RDS(ON) < 15mΩ @ VGS=4.5V RDS(ON) < 17 mΩ @ VGS=3.8V RDS(ON) < 21mΩ @ V

PDF File Details

Part number:

PE8806

Manufacturer:

semi one

File Size:

883.47 KB

Download:

📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The PE8806 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2

📥 Download PDF (883.47 KB)

📁 Related Datasheet

PE8804 - N-Channel Enhancement Mode Power MOSFET (semi one)

PE8806B - N-Channel Enhancement Mode Power MOSFET (ChipSourceTek)

PE8810 - N-Channel Enhancement Mode Power MOSFET (semi one)

PE8810A - N-Channel Enhancement Mode Power MOSFET (ChipSourceTek)

PE8810B - N-Channel Enhancement Mode Power MOSFET (ChipSourceTek)

PE8810C - N-Channel Enhancement Mode Power MOSFET (ChipSourceTek)

PE8813 - N-Channel Enhancement Mode Power MOSFET (semi one)

PE8816 - N-Channel Enhancement Mode Power MOSFET (ChipSourceTek)

TAGS

PE8806 N-Channel Enhancement Mode Power MOSFET semi one