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CY7C1062GE - 16-Mbit (512 K words x 32 bits) Static RAM

Download the CY7C1062GE datasheet PDF. This datasheet also covers the CY7C1062G variant, as both devices belong to the same 16-mbit (512 k words x 32 bits) static ram family and are provided as variant models within a single manufacturer datasheet.

Description

CY7C1062G and CY7C1062GE are high-performance CMOS fast static RAM devices with embedded ECC.

Features

  • High speed.
  • tAA = 10 ns/15 ns.
  • Embedded error-correcting code (ECC) for single-bit error correction.
  • Low active and standby current.
  • ICC = 90 mA typical.
  • ISB2 = 20 mA typical.
  • Operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V.
  • 1.0-V data retention.
  • Automatic power-down when deselected.
  • Transistor-transistor logic (TTL) compatible inputs and outputs.
  • ERR pin to indicate 1-bit error detection and correction.
  • Available in Pb-free 1.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY7C1062G-CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
CY7C1061DV33 16-Mbit (1 M X 16) Static RAM Cypress
CY7C1061G 16-Mbit (1 M words x 16 bit) Static RAM Cypress
CY7C106D 1-Mbit (256K x 4) Static RAM Cypress
CY7C1006D 1-Mbit (256K x 4) Static RAM Cypress
CY7C1011G 2-Mbit (128K words x 16 bit) Static RAM Cypress

Other Datasheets by Cypress (Infineon)

Part Number Description
CY7C1062G 16-Mbit (512 K words x 32 bits) Static RAM
CY7C1062DV33 16 Mbit (512K x 32) Static RAM
CY7C10612DV33 16-Mbit (1M x 16) Static RAM
CY7C10612G 16-Mbit (1M x 16) Static RAM
CY7C10612GE 16-Mbit (1M x 16) Static RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CY7C1062G CY7C1062GE 16-Mbit (512 K words × 32 bits) Static RAM with Error-Correcting Code (ECC) 16-Mbit (512 K words × 32 bits) Static RAM with Error-Correcting Code (ECC) Features ■ High speed ❐ tAA = 10 ns/15 ns ■ Embedded error-correcting code (ECC) for single-bit error correction ■ Low active and standby current ❐ ICC = 90 mA typical ❐ ISB2 = 20 mA typical ■ Operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V ■ 1.0-V data retention ■ Automatic power-down when deselected ■ Transistor-transistor logic (TTL) compatible inputs and outputs ■ ERR pin to indicate 1-bit error detection and correction ■ Available in Pb-free 119-ball plastic ball grid array (PBGA) package Functional Description CY7C1062G and CY7C1062GE are high-performance CMOS fast static RAM devices with embedded ECC.
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