Datasheet4U Logo Datasheet4U.com

CY7C10612G - 16-Mbit (1M x 16) Static RAM

Description

The CY7C10612G and CY7C10612GE are high performance CMOS fast static RAM devices with embedded ECC.

These devices are offered in single chip enable option.

The CY7C10612GE device includes an error indication pin that signals an error-detection and correction event during a read cycle.

Features

  • High speed.
  • tAA = 10 ns.
  • Embedded error-correcting code (ECC) for single-bit error correction.
  • Low active power.
  • ICC = 90 mA typical.
  • Low CMOS standby power.
  • ISB2 = 20 mA typical.
  • Operating voltages of 3.3 ± 0.3 V.
  • 1.0 V data retention.
  • Transistor-transistor logic (TTL) compatible inputs and outputs.
  • ERR pin to indicate 1-bit error detection and correction.
  • Available in Pb-free 54-pin TSOP II package Functional.

📥 Download Datasheet

Datasheet preview – CY7C10612G

Datasheet Details

Part number CY7C10612G
Manufacturer Cypress Semiconductor
File Size 747.76 KB
Description 16-Mbit (1M x 16) Static RAM
Datasheet download datasheet CY7C10612G Datasheet
Additional preview pages of the CY7C10612G datasheet.

📁 Similar Datasheet

  • CY7C1061DV33 - 16-Mbit (1 M X 16) Static RAM (Cypress)
  • CY7C1061G - 16-Mbit (1 M words x 16 bit) Static RAM (Cypress)
  • CY7C106D - 1-Mbit (256K x 4) Static RAM (Cypress)
  • CY7C1006D - 1-Mbit (256K x 4) Static RAM (Cypress)
  • CY7C1011G - 2-Mbit (128K words x 16 bit) Static RAM (Cypress)
  • CY7C1041G - 4-Mbit (256K words x 16 bit) Static RAM (Cypress)
  • CY7C1041GE - 4-Mbit (256K words x 16 bit) Static RAM (Cypress)
  • CY7C1041GN - 4-Mbit (256K words x 16 bit) Static RAM (Cypress)
  • CY7C1049GN - 4-Mbit (512K words x 8 bit) Static RAM (Cypress)
  • CY7C131AE - 1K/2K x 8 Dual-Port Static RAM (Cypress)
Other Datasheets by Cypress Semiconductor

Full PDF Text Transcription

Click to expand full text
CY7C10612G CY7C10612GE 16-Mbit (1M × 16) Static RAM 16-Mbit (1M × 16) Static RAM Features ■ High speed ❐ tAA = 10 ns ■ Embedded error-correcting code (ECC) for single-bit error correction ■ Low active power ❐ ICC = 90 mA typical ■ Low CMOS standby power ❐ ISB2 = 20 mA typical ■ Operating voltages of 3.3 ± 0.3 V ■ 1.0 V data retention ■ Transistor-transistor logic (TTL) compatible inputs and outputs ■ ERR pin to indicate 1-bit error detection and correction ■ Available in Pb-free 54-pin TSOP II package Functional Description The CY7C10612G and CY7C10612GE are high performance CMOS fast static RAM devices with embedded ECC. These devices are offered in single chip enable option.
Published: |