CY7C10612GN, CY7C1061GN Datasheet - Cypress Semiconductor

CY7C10612GN 16-Mbit (1M words x 16 bit) Static RAM

The CY7C1061GN/CY7C10612GN is a high performance CMOS Static RAM organized as 1,048,576 words by 16 bits. To write to the device, take Chip Enables (CE1 LOW and CE2 HIGH) and Write Enable (WE) input LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into th.

CY7C10612GN Features

* High speed

* tAA = 10 ns/15 ns

* Low active power

* ICC = 90 mA at 100 MHz

* Low CMOS standby current

* ISB2 = 20 mA (typ)

* Operating voltages of 2.2 V to 3.6 V

* 1.0 V data retention

* Automatic power down when deselected

* TTL compatible inputs and output

CY7C1061GN-CypressSemiconductor.pdf

CY7C10612GN Datasheet Preview — This datasheet PDF includes multiple part numbers: CY7C10612GN, CY7C1061GN. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

CY7C10612GN, CY7C1061GN

Manufacturer:

Cypress Semiconductor

File Size:

1.77 MB

Description:

16-mbit (1m words x 16 bit) static ram.

Note:

This datasheet PDF includes multiple part numbers: CY7C10612GN, CY7C1061GN.
Please refer to the document for exact specifications by model.

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TAGS

CY7C10612GN CY7C1061GN 16-Mbit words bit Static RAM Cypress Semiconductor

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