The CY7C1061GN/CY7C10612GN is a high performance CMOS Static RAM organized as 1,048,576 words by 16 bits.
To write to the device, take Chip Enables (CE1 LOW and CE2 HIGH) and Write Enable (WE) input LOW.
If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into th
CY7C10612GN Features
* High speed
* tAA = 10 ns/15 ns
* Low active power
* ICC = 90 mA at 100 MHz
* Low CMOS standby current
* ISB2 = 20 mA (typ)
* Operating voltages of 2.2 V to 3.6 V
* 1.0 V data retention
* Automatic power down when deselected
* TTL compatible inputs and output
CY7C1061GN-CypressSemiconductor.pdf
Datasheet Details
CY7C10612GN, CY7C1061GN
Cypress Semiconductor
1.77 MB
16-mbit (1m words x 16 bit) static ram.
This datasheet PDF includes multiple part numbers: CY7C10612GN, CY7C1061GN.
Please refer to the document for exact specifications by model.
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