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CY7C10612GN

16-Mbit (1M words x 16 bit) Static RAM

CY7C10612GN Features

* High speed

* tAA = 10 ns/15 ns

* Low active power

* ICC = 90 mA at 100 MHz

* Low CMOS standby current

* ISB2 = 20 mA (typ)

* Operating voltages of 2.2 V to 3.6 V

* 1.0 V data retention

* Automatic power down when deselected

* TTL compatible inputs and output

CY7C10612GN General Description

The CY7C1061GN/CY7C10612GN is a high performance CMOS Static RAM organized as 1,048,576 words by 16 bits. To write to the device, take Chip Enables (CE1 LOW and CE2 HIGH) and Write Enable (WE) input LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into th.

CY7C10612GN Datasheet (1.77 MB)

Preview of CY7C10612GN PDF

Datasheet Details

Part number:

CY7C10612GN

Manufacturer:

Cypress Semiconductor

File Size:

1.77 MB

Description:

16-mbit (1m words x 16 bit) static ram.

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TAGS

CY7C10612GN 16-Mbit words bit Static RAM Cypress Semiconductor

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