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CY7C1061DV18

16-Mbit (1M x 16) Static RAM

CY7C1061DV18 Features

* High Speed

* tAA = 15 ns

* Low Active Power

* ICC = 150 mA at 67 MHz

* Low complementary metal oxide semiconductor (CMOS) Standby Power

* ISB2 = 25 mA

* Operating voltages of 1.7 V to 2.2 V

* 1.5 V data retention

* Automatic power-down when deselected

* Tran

CY7C1061DV18 General Description

The CY7C1061DV18 is a high performance CMOS Static RAM (SRAM) organized as 1,048,576 words by 16 bits. To write to the device, enable the chip (CE1 LOW and CE2 HIGH) while forcing the Write Enable (WE) input LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is writte.

CY7C1061DV18 Datasheet (366.03 KB)

Preview of CY7C1061DV18 PDF

Datasheet Details

Part number:

CY7C1061DV18

Manufacturer:

Cypress Semiconductor

File Size:

366.03 KB

Description:

16-mbit (1m x 16) static ram.

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TAGS

CY7C1061DV18 16-Mbit Static RAM Cypress Semiconductor

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