The CY7C10612G and CY7C10612GE are high performance CMOS fast static RAM devices with embedded ECC.
These devices are offered in single chip enable option.
The CY7C10612GE device includes an error indication pin that signals an error-detection and correction event during a read cycle.
To write to th
CY7C10612GE Features
* High speed
* tAA = 10 ns
* Embedded error-correcting code (ECC) for single-bit error correction
* Low active power
* ICC = 90 mA typical
* Low CMOS standby power
* ISB2 = 20 mA typical
* Operating voltages of 3.3 ± 0.3 V
* 1.0 V data retention
* Transistor-t
CY7C10612G-CypressSemiconductor.pdf
Datasheet Details
CY7C10612GE, CY7C10612G
Cypress Semiconductor
747.76 KB
16-mbit (1m x 16) static ram.
This datasheet PDF includes multiple part numbers: CY7C10612GE, CY7C10612G.
Please refer to the document for exact specifications by model.
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