CY7C10612GE, CY7C10612G Datasheet - Cypress Semiconductor

CY7C10612GE 16-Mbit (1M x 16) Static RAM

The CY7C10612G and CY7C10612GE are high performance CMOS fast static RAM devices with embedded ECC. These devices are offered in single chip enable option. The CY7C10612GE device includes an error indication pin that signals an error-detection and correction event during a read cycle. To write to th.

CY7C10612GE Features

* High speed

* tAA = 10 ns

* Embedded error-correcting code (ECC) for single-bit error correction

* Low active power

* ICC = 90 mA typical

* Low CMOS standby power

* ISB2 = 20 mA typical

* Operating voltages of 3.3 ± 0.3 V

* 1.0 V data retention

* Transistor-t

CY7C10612G-CypressSemiconductor.pdf

CY7C10612GE Datasheet Preview — This datasheet PDF includes multiple part numbers: CY7C10612GE, CY7C10612G. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

CY7C10612GE, CY7C10612G

Manufacturer:

Cypress Semiconductor

File Size:

747.76 KB

Description:

16-mbit (1m x 16) static ram.

Note:

This datasheet PDF includes multiple part numbers: CY7C10612GE, CY7C10612G.
Please refer to the document for exact specifications by model.

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CY7C10612GE CY7C10612G 16-Mbit Static RAM Cypress Semiconductor

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