CY7C1612KV18 - 144-Mbit QDR II SRAM Two-Word Burst Architecture
Download the CY7C1612KV18 datasheet PDF (CY7C1625KV18 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 144-mbit qdr ii sram two-word burst architecture.
Features
Separate independent read and write data ports.
Supports concurrent transactions.
360-MHz clock for high bandwidth.
Two-word burst on all accesses.
Double data rate (DDR) interfaces on both read and write ports
(data transferred at 720 MHz) at 360 MHz.
Two input clocks (K and K) for precise DDR timing.
SRAM uses rising edges only.
Two input clocks for output data (C and C) to minimize clock
skew and flight time mismatches.
Note: The manufacturer provides a single datasheet file (CY7C1625KV18-CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.
CY7C1625KV18 CY7C1612KV18 CY7C1614KV18
144-Mbit QDR® II SRAM Two-Word Burst Architecture
144-Mbit QDR® II SRAM Two-Word Burst Architecture
Features
■ Separate independent read and write data ports ❐ Supports concurrent transactions
■ 360-MHz clock for high bandwidth ■ Two-word burst on all accesses ■ Double data rate (DDR) interfaces on both read and write ports
(data transferred at 720 MHz) at 360 MHz ■ Two input clocks (K and K) for precise DDR timing
❐ SRAM uses rising edges only ■ Two input clocks for output data (C and C) to minimize clock
skew and flight time mismatches ■ Echo clocks (CQ and CQ) simplify data capture in high-speed
systems ■ Single multiplexed address input bus latches address inputs
for both read and write ports ■ Separate port selects for depth expansion ■ Synchron