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GVT71256T18 - (GVT71256T18 / GVT7C1359A) 256K X 18 Synchronous-pipelined Cache Tag RAM

Description

The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology.

Each memory cell consists of four transistors and two high valued resistors.

Features

  • Fast match times: 3.5, 3.8, 4.0 and 4.5 ns Fast clock speed: 166, 150, 133, and 100 MHz Fast OE access times: 3.5, 3.8, 4.0 and 5.0 ns Pipelined data comparator Data input register load control by DEN Optimal for depth expansion (one cycle chip deselect to eliminate bus contention) 3.3V.
  • 5% and +10% c.

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Datasheet Details

Part number GVT71256T18
Manufacturer Cypress Semiconductor
File Size 283.14 KB
Description (GVT71256T18 / GVT7C1359A) 256K X 18 Synchronous-pipelined Cache Tag RAM
Datasheet download datasheet GVT71256T18 Datasheet
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( DataSheet : www.DataSheet4U.com ) 327 CY7C1359A/GVT71256T18 256K x 18 Synchronous-Pipelined Cache Tag RAM Features • • • • • • • • • • • • • • • • • • • Fast match times: 3.5, 3.8, 4.0 and 4.5 ns Fast clock speed: 166, 150, 133, and 100 MHz Fast OE access times: 3.5, 3.8, 4.0 and 5.0 ns Pipelined data comparator Data input register load control by DEN Optimal for depth expansion (one cycle chip deselect to eliminate bus contention) 3.3V –5% and +10% core power supply 2.5V or 3.
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