VDS = 650V ID =10A RDS(ON) < 0.9Ω @ VGS=10V （Type：0.75Ω） Application Uninterruptible Power Supply(UPS) Power Factor Correction (PFC) Absolute Maximum Ratings (TC=25℃unle.

, should be limited by total power dissipation. 2 10N65F Typical Characteristics 650V N-Channel Enhancement Mode MOSF.

The 10N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit.

10N65

10N65-C

10N65-Q

10N65B

10N65H

10N65K

10N65K-MT

10N65T

10N65Z

10N65Z-Q

10N60

10N60-HC

10N60-TC