10N65F Datasheet | Specifications & PDF Download

Silan Microelectronics SVF10N65T/F/K/S_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65T/F/K/S is an N-channel enhancement mode po

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Silicon N-Channel Power MOSFET CS10N65F A9R ○R General Description： CS10N65F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the sel

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SEMICONDUCTOR TECHNICAL DATA KF10N65F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristic

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N R N-CHANNEL MOSFET JCS10N65EI MAIN CHARACTERISTICS Package ID VDSS Rdson-max （Vgs=10V） Qg-Typ 10 A 650 V 0.85Ω 30 nC    LED APPLIC

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10N65(F,B,H) 10A mps,650 Volts N-CHANNEL MOSFET FEATURE  10A,650V,RDS(ON)=0.85Ω@VGS=10V/5A  Low gate charge  Low Ciss  Fast switching  100% av

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GaN Enhancement-mode Power Transistor CID10N65F General description 650V GaN-on-Silicon Enhancement-mode Power Transistor in TO220F-3L Package Featu

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Silicon N-Channel Power MOSFET CS10N65F A9HD ○R General Description： CS10N65F A9HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the sel

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SVD10N65T/F(G)_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD10N65T/F(G) is an N-channel enhancement mode power MOS field effect transis

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N R N-CHANNEL MOSFET JCS10N65T MAIN CHARACTERISTICS Package ID 9.5 A VDSS 650 V Rdson（@Vgs=10V） 0.95Ω Qg 34 nC z z z UPS APPLICAT

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SVD10N65T/F(G)_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD10N65T/F(G) is an N-channel enhancement mode power MOS field effect transis

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FCH110N65F — N-Channel SuperFET® II FRFET® MOSFET December 2014 FCH110N65F N-Channel SuperFET® II FRFET® MOSFET 650 V, 35 A, 110 mΩ Features • 700

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 35A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance

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GaN Enhancement-mode Power Transistor CID10N65F General description 650V GaN-on-Silicon Enhancement-mode Power Transistor in TO220F-3L Package Featu

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FCP110N65F — N-Channel SuperFET® II FRFET® MOSFET December 2014 FCP110N65F N-Channel SuperFET® II FRFET® MOSFET 650 V, 35 A, 110 mΩ Features • 700

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FCB110N65F — N-Channel SuperFET® II FRFET® MOSFET August 2016 FCB110N65F N-Channel SuperFET® II FRFET® MOSFET 650 V, 35 A, 110 mΩ Features • 700 V

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AGM10N65F ● General Description The AGM10N65F combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(O

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ICE10N65FP N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switchi

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10N65F 650V N-Channel Enhancement Mode MOSFET Description The 10N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar

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Silicon N-Channel Power MOSFET CR10N65F A9K General Description： CR10N65F A9K, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig

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DTU10N65SJ/DTP10N6SJ/DTP10N6FSJ www.din-tek.jp N-Channel 650V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. 650 RDS(on) m

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