EDD5116ADTA-LI - 512M bits DDR SDRAM WTR

This page provides the datasheet information for the EDD5116ADTA-LI, a member of the EDD5108ADTA-LI 512M bits DDR SDRAM WTR family.

Description

The EDD5108AD and the EDD5116AD are 512M bits Double Data Rate (DDR) SDRAM.

Read and write operations are performed at the cross points of the CK and the /CK.

This high-speed data transfer is realized by the 2 bits prefetch-pipelined architecture.

Features

Power supply: VDD, VDDQ = 2.5V ± 0.2V.
Data Rate: 333Mbps/266Mbps (max. ).
Double Data Rate architecture; two data transfers per clock cycle.
Bi-directional, data strobe (DQS) is transmitted /received with data, to be used in capturing data at the receiver.
Data inputs, outputs, and DM are synchronized with DQS.
4 internal banks for concurrent operation.
DQS is edge aligned with data for READs; center aligned with data for WRITEs.

Elpida Memory

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Datasheet Details

Part number	EDD5116ADTA-LI
Manufacturer	Elpida Memory
File Size	629.72 KB
Description	512M bits DDR SDRAM WTR
Datasheet	EDD5116ADTA-LI Datasheet
Additional preview pages of the EDD5116ADTA-LI datasheet.

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DATA SHEET 512M bits DDR SDRAM WTR (Wide Temperature Range) EDD5108ADTA-LI (64M words × 8 bits) EDD5116ADTA-LI (32M words × 16 bits) Description The EDD5108AD and the EDD5116AD are 512M bits Double Data Rate (DDR) SDRAM. Read and write operations are performed at the cross points of the CK and the /CK. This high-speed data transfer is realized by the 2 bits prefetch-pipelined architecture. Data strobe (DQS) both for read and write are available for high speed and reliable data bus design. By setting extended mode register, the on-chip Delay Locked Loop (DLL) can be set enable or disable. Pin Configurations /xxx indicates active low signal.

Published: Nov 20, 2009 |