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Excelics Semiconductor

EID1414A1-5 Datasheet Preview

EID1414A1-5 Datasheet

14.00-14.50 GHz 5-Watt Internally-Matched Power FET

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UPDATED 07/12/2007
EID1414A1-5
14.00-14.50 GHz 5-Watt Internally-Matched Power FET
FEATURES
14.00-14.50 GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+37.5 dBm Output Power at 1dB Compression
7.5 dB Power Gain at 1dB Compression
35% Power Added Efficiency
Hermetic Metal Flange Package
100% Tested for DC, RF, and RTH
DESCRIPTION
The EID1414A1-5 is a high power, highly linear,
single stage MFET amplifier in a flange mount
package. This amplifier features Excelics’ unique
PHEMT transistor technology.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
G
PAE
Output Power at 1dB Compression f = 14.00-14.50GHz
VDS = 10 V, IDSQ = 1200mA
Gain at 1dB Compression
f = 14.00-14.50GHz
VDS = 10 V, IDSQ = 1200mA
Gain Flatness
f = 14.00-14.50GHz
VDS = 10 V, IDSQ = 1200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ = 1200mA
f = 14.00-14.50GHz
Id1dB
Drain Current at 1dB Compression f = 14.00-14.50GHz
IDSS Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
RTH Thermal Resistance2
Notes:
1. Tested with 100 Ohm gate resistor.
2. Overall Rth depends on case mounting.
VDS = 3 V, IDS = 20 mA
MIN
37.0
6.5
TYP
37.5
7.5
35
1400
2080
-2.5
5.5
MAX
UNITS
dBm
dB
±0.6 dB
%
1800 mA
2880 mA
-4.0 V
6.0 oC/W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4
Revised July 2007




Excelics Semiconductor

EID1414A1-5 Datasheet Preview

EID1414A1-5 Datasheet

14.00-14.50 GHz 5-Watt Internally-Matched Power FET

No Preview Available !

www.DataSheet4U.com
EID1414A1-5
UPDATED 07/12/2007
14.00-14.50 GHz 5-Watt Internally-Matched Power FET
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2
SYMBOL
CHARACTERISTIC
VALUE
VDS Drain to Source Voltage
10 V
VGS Gate to Source Voltage
-4.5 V
IDS Drain Current
IDSS
IGSF Forward Gate Current
40 mA
PIN Input Power
@ 3dB compression
PT Total Power Dissipation
23 W
TCH Channel Temperature
150°C
TSTG
Storage Temperature
-65/+150°C
Notes:
1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
2. Bias conditions must also satisfy the following equation PT < (TCH –TPKG)/RTH; where TPKG = temperature of package, and
PT = (VDS * IDS) – (POUT – PIN).
PERFORMANCE DATA
Typical S-Parameters (T= 25°C, 50system, de-embedded to edge of package)
VDS = 10 V, IDSQ = 1200mA
S11 and S22
Swp Max
15GHz
20
S21 and S12
-3.0
-4.0
-5.0
-10.0
-0.2
-0.4
3.0
4.0
5.0
10.0
S[1,1] *
EID1414-5
S[2,2] *
EID1414-5
0.2
0.4
Swp Min
13.5GHz
10
0
-10
-20
-30
13.5
DB(|S[2,1]|) *
EID1414-5
DB(|S[1,2]|) *
EID1414-5
14 14.5
Frequency (GHz)
15
FREQ
(GHz)
13.60
13.70
13.80
13.90
14.00
14.10
14.20
14.30
14.40
14.50
14.60
14.70
14.80
14.90
--- S11 ---
MAG
ANG
0.3380
-90.79
0.2971
-97.44
0.2552
-105.20
0.2045
-112.85
0.1524
-122.48
0.0956
-135.11
0.0411
-169.43
0.0435
81.13
0.1025
54.46
0.1651
42.41
0.2214
33.93
0.2802
26.00
0.3322
20.00
0.3800
13.06
--- S21 ---
MAG
ANG
2.5944
-176.44
2.6490
175.75
2.6962
167.96
2.7481
159.02
2.7628
151.12
2.7767
142.28
2.7844
133.47
2.7578
124.71
2.7359
115.60
2.6853
106.41
2.6150
98.28
2.5646
89.44
2.4814
81.16
2.3964
72.99
--- S12 ---
MAG
ANG
0.0603
170.24
0.0609
161.63
0.0630
153.33
0.0655
145.93
0.0694
136.76
0.0683
128.89
0.0703
119.55
0.0701
111.32
0.0691
101.22
0.0682
91.51
0.0693
84.19
0.0673
75.38
0.0659
66.29
0.0653
58.58
--- S22 ---
MAG
ANG
0.4755
-153.89
0.4390
-160.10
0.3950
-166.55
0.3527
-173.84
0.3036
177.97
0.2507
166.52
0.2036
152.97
0.1626
134.59
0.1352
109.08
0.1272
81.88
0.1428
53.54
0.1711
33.11
0.2059
19.24
0.2374
7.89
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 4
Revised July 2007


Part Number EID1414A1-5
Description 14.00-14.50 GHz 5-Watt Internally-Matched Power FET
Maker Excelics Semiconductor
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EID1414A1-5 Datasheet PDF






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