Datasheet4U Logo Datasheet4U.com

EMB17A03V - Dual N-Channel MOSFET

📥 Download Datasheet

Datasheet preview – EMB17A03V

Datasheet Details

Part number EMB17A03V
Manufacturer Excelliance MOS
File Size 180.96 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet EMB17A03V Datasheet
Additional preview pages of the EMB17A03V datasheet.

📁 Similar Datasheet

  • EMB10 - PNP Digital Transistors (Rohm)
  • EMB10FHA - PNP -100mA -50V Complex Digital Transistors (ROHM)
  • EMB11 - Dual Digital Transistors (Rohm)
  • EMB11 - Dual Digital Transistors (JCET)
  • EMB1412 - EMB1412 MOSFET Gate Driver (Rev. B) (ETCTI)
  • EMB1428Q - EMB1428Q Switch Matrix Gate Driver (Rev. A) (ETCTI)
  • EMB1432Q - EMB1432Q 60-V 14-Channel Battery Stack Module Analog Front End (Rev. D) (ETCTI)
  • EMB1433Q - EMB1433Q 60-V 14-Channel Battery Stack Protection Chip with Programmable Window Comparator Supports Multi-Module Battery Packs (Rev. B) (ETCTI)
  • EMB1499Q - EMB1499Q Bidirectional Current DC-DC Controller (Rev. B) (ETCTI)
  • EMB16N06G - N-Channel Trench Power MOSFET (Kexin)
Other Datasheets by Excelliance MOS

Full PDF Text Transcription

Click to expand full text
    Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  30V  RDSON (MAX.)  17mΩ  ID  10A    UIS, Rg 100% Tested  Pb‐Free Lead Plating & Halogen Free    ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)  PARAMETERS/TEST CONDITIONS  SYMBOL  EMB17A03V LIMITS  UNIT  Gate‐Source Voltage  VGS  ±20  Continuous Drain Current  Pulsed Drain Current1  TA = 25 °C  TA = 100 °C  ID  IDM  10  7  40  Avalanche Current  IAS  12  Avalanche Energy  Repetitive Avalanche Energy2  L = 0.1mH, ID=10A, RG=25Ω  L = 0.05mH  EAS  EAR  5  2.5  Power Dissipation  TA = 25 °C  TA = 100 °C  Operating Junction & Storage Temperature Range  PD  Tj, Tstg  2.27  0.9  ‐55 to 150  100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=7.
Published: |