NDS332P Datasheet, Fairchild

-1 A, -20 V, RDS(ON) = 0.41 Ω @ VGS= -2.7 V RDS(ON) = 0.3 Ω @ VGS = -4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.0.

such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-sid.

These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These d.