NDS352AP transistor equivalent, p-channel logic level enhancement mode field effect transistor.
-0.9 A, -30 V. RDS(ON) = 0.5 Ω @ VGS = -4.5 V RDS(ON) = 0.3 Ω @ VGS = -10 V. Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design .
such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-sid.
These P -Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These .
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