NDS355AN transistor equivalent, n-channel logic level enhancement mode field effect transistor.
1.7A, 30 V, RDS(ON) = 0.125 Ω @ VGS = 4.5 V RDS(ON) = 0.085 Ω @ VGS = 10 V. Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design f.
in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low i.
SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. .
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