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NDS351N Datasheet - Fairchild

N-Channel Logic Level Enhancement Mode Field Effect Transistor

NDS351N Features

* 1.1A, 30V. RDS(ON) = 0.25Ω @ VGS = 4.5V. Proprietary package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. Compact industry standard SOT-23 surface moun

NDS351N General Description

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage app.

NDS351N Datasheet (75.68 KB)

Preview of NDS351N PDF

Datasheet Details

Part number:

NDS351N

Manufacturer:

Fairchild

File Size:

75.68 KB

Description:

N-channel logic level enhancement mode field effect transistor.

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NDS351N N-Channel Logic Level Enhancement Mode Field Effect Transistor Fairchild

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