NDS352P transistor equivalent, p-channel logic level enhancement mode field effect transistor.
-0.85A, -20V. RDS(ON) = 0.5Ω @ VGS = -4.5V. Proprietary package design using copper lead frame for superior thermal and electrical capabilities. High density cell design .
such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-sid.
These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These d.
Image gallery
TAGS
Download (Size : 78.92KB)