N-Channel 5.7A, 30V, RDS(ON)=0.045Ω @ VGS=10V. P-Channel -4.0A, -30V, RDS(ON)=0.09Ω @ VGS=-10V. High density cell design or extremely low RDS(ON). High power and current .

or CMOS applications when both gates are connected together. Features N-Channel 5.7A, 30V, RDS(ON)=0.045Ω @ VGS=10V. P-.

These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performan.

NDS8852H

NDS8858H

NDS8410

NDS8410A

NDS8410S

NDS8425

NDS8426

NDS8426A

NDS8433

NDS8434

NDS8434A

NDS8435

NDS8435A