NDS8852H Datasheet - Fairchild

NDS8852H, Complementary MOSFET

These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology.

Features

* N-Channel 4.3A, 30V, RDS(ON)=0.08Ω @ VGS=10V. P-Channel -3.4A, -30V, RDS(ON)=0.13Ω @ VGS=-10V. High density cell design or extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Matched pair for equal input capacitance and power capability . ______

NDS8852H_FairchildSemiconductor.pdf