NDS8852H - Complementary MOSFET

Fairchild

Datasheet Details

Part number	NDS8852H
Manufacturer	Fairchild ↗
File Size	349.57 KB
Description	Complementary MOSFET
Datasheet	NDS8852H_FairchildSemiconductor.pdf

These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology.

N-Channel 4.3A, 30V, RDS(ON)=0.08Ω @ VGS=10V. P-Channel -3.4A, -30V, RDS(ON)=0.13Ω @ VGS=-10V. High density cell design or extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Matched pair for equal input capacitance and power capability . ________________________________________________________________________________ V+ P-Gate Vout Vout Vout N -Gate Vout V- Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltag.

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Published: May 12, 2005 |